Gallium nitride(GaN)

Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology that has moved from labs to markets. GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation semiconductor for optoelectronic/power/RF applications and thus different countries are indulged in developing widespread applications of GaN semiconductors.

Read more about GaN:

​GaN Blue LEDs win 2014 Nobel Prize

GaN: Making the New Si

Go GaN: Go Green

GaN: the most important compound you've heard of

April, 2024

·Jiaxiang Chen, Haitao Du and co-author's paper about "AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing" was accepted by "Applied Physics Letters Machine Learning". Congratulations!

·GaNology Lab 陈嘉祥，杜海涛及其合作者的题为“AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing”的文章，被《Applied Physics Letters Machine Learning》接收。恭喜！

·Han Gao, Yitian Gu and co-author's paper about "545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching" was accepted by "IEEE Electron Device Letters". Congratulations!

·GaNology Lab 高涵，顾怡恬及其合作者的题为“545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching”的文章，被《IEEE Electron Device Letters》接收。恭喜！

·Yitai Zhu and co-author's paper about "Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment" was accepted by "Microelectronics Journal". Congratulations!

·GaNology Lab 朱一泰及其合作者的题为“Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment”的文章，被《Microelectronics Journal》接收。恭喜！

·Chunlin Du and co-author's paper about "Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium" was accepted by "Numerical simulation and mathematical modelling". Congratulations!

·GaNology Lab 杜春琳及其合作者的题为“Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium”的文章，被《Numerical simulation and mathematical modelling》接收。恭喜！

March, 2024

·Ke Li and co-author's paper about "Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier" was accepted by "Electronics". Congratulations!

·GaNology Lab 李轲及其合作者的题为“Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier”的文章，被《Electronics》接收。恭喜！

January, 2024

·Jiaxiang Chen and co-author's paper about "Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors" was accepted by "Journal of Applied Physics". Congratulations!

·GaNology Lab 陈嘉祥及其合作者的题为“Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors”的文章，被《Journal of Applied Physics》接收。恭喜！

·Haolan Qu and co-author's paper about "Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures" was accepted by "Journal of Vacuum Science & Technology A". Congratulations!

·GaNology Lab 屈昊岚及其合作者的题为“Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures”的文章，被《Journal of Vacuum Science & Technology A》接收。恭喜！

·Jin Sui and co-author's paper about " Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy" was accepted by " Journal of Semiconductors". Congratulations!

·GaNology Lab 睢金及其合作者的题为“Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy”的文章，被《Journal of Semiconductors》接收。恭喜！

December, 2023

·Congratulations to Yitian Gu, Yu Zhang, Jiaxiang Chen, and Haolan Qu for winning the outstanding student. Congratulations to Junmin Zhou, Jin Sui, Haitao Du, and Yitai Zhu for winning the merit student.

·恭喜顾怡恬，张羽，陈嘉祥与屈昊岚获三好学生，睢金，周隽民，杜海涛与朱一泰获优秀学生称号。

November,2022

·Chen Jiaxiang and Du Haitao gave oral presentations at the ICNS-14, and they were awarded the Best Student Award by the presidium of the conference. More. 

·陈嘉祥和杜海涛在大会做口头报告，经过会议主席团推荐及评审后，均荣获最佳学生奖。

September,2023

·Wenbo Ye officially registered as graduate students of SIST, ShanghaiTech.

​·叶文博正式入学上海科技大学信息学院成为GaNology Lab 的研究生。

·Yu Zhang and co-author's paper about "Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric" was accepted by "IEEE Transactions on Electron Devices". Congratulations!

·GaNology Lab 张羽及其合作者的题为“Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric”的文章，被《IEEE Transactions on Electron Devices》接收。恭喜！

·Jiaxiang Chen and Haitao Du's paper were all accepted by "The 14th International Conference on Nitride Semiconductors (ICNS-14)". Congratulations!

·GaNology Lab 陈嘉祥和杜海涛的两篇文章均被The 14th International Conference on Nitride Semiconductors (ICNS-14)接收。恭喜！

·Haolan Qu's paper about "Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy" was accepted by "Semiconductor Science and Technology". Congratulations to DLTS group!

·GaNology Lab 屈昊岚的题为“Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy”的文章，被《Semiconductor Science and Technology》接收。恭喜DLTS小组！

July,2023

·Junmin Zhou's paper about "RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications" was accepted by "IEEE Electron Device Letters". Congratulations!

·GaNology Lab 周隽民的题为“RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications”的文章，被《IEEE Electron Device Letters》接收。恭喜！

June,2023

·Jin Sui, Jiaxiang Chen, and Haolan Qu attended to China Semiconductor Technology International Conference (CSTIC) in Shanghai.

·睢金，陈嘉祥和屈昊岚同学在上海参加了中国国际半导体技术大会。

May,2023

·Congratulations to Wenhan Song and Lihua Xu, the graduate students of Ganology lab in 2020, for successfully completing their studies.

·祝贺GaNology Lab 2020级硕士研究生（2023级毕业生）宋文涵和徐梨花顺利完成学业。