Gallium nitride(GaN)

Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology that has moved from labs to markets. GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation semiconductor for optoelectronic/power/RF applications and thus different countries are indulged in developing widespread applications of GaN semiconductors.

Read more about GaN:

​GaN Blue LEDs win 2014 Nobel Prize

GaN: Making the New Si

Go GaN: Go Green

GaN: the most important compound you've heard of

September， 2025

Welcome Yang Ge, Liu Changshu, Li Jietong, Zhu Wenxin, Wang Ziyang, Zhang Haowei, Wei Jiayi, and Wang Junfei to the GaNology Lab family!

欢迎 杨鸽，刘昌沭，李洁彤，朱闻新，王子阳，张浩伟，魏嘉怡，王骏飞 加入GaNology Lab 大家庭！

July， 2025

Wenbo Ye attended the ICNS-15 conference in Malmö, Sweden, from July 6 to July 12.

叶文博同学在7月6日-7月12日去瑞典马尔默参加ICNS-15会议！

叶文博同学，马宇川同学与Kei May LAU教授的合照！

June， 2025

Congratulations to Gao Han, Zhu Yitai, and Du Haitao on their successful graduation!

祝贺高涵，朱一泰，杜海涛三位研究生顺利毕业！

May， 2025

Congratulations to Gao Han, Zhu Yitai, and Du Haitao on successfully passing their thesis defenses!

祝贺高涵，朱一泰，杜海涛三位研究生顺利通过毕业答辩！

April， 2025

Wenbo Ye, Han Gao, Junmin Zhou, Yitian Gu, Yudong Li, Haodong Jiang, Xuanling Zhou, Wenhui Xu, Xin Ou, and Xinbo Zou*, "Neutral Beam Etching: A Pathway to High-performance E-mode Recessed-Gate GaN MOSHEMTs for Power and RF Applications", The 15th International Conference on Nitride Semiconductors (ICNS-15), Malmö, Sweden, 2025， accepted！

叶文博发表的题为 "Neutral Beam Etching: A Pathway to High-performance E-mode Recessed-Gate GaN MOSHEMTs for Power and RF Applications"的文章被 The 15th International Conference on Nitride Semiconductors (ICNS-15)接收，恭喜！

Congratulations to Yitai Zhu on being recognized as an Outstanding Graduate!

恭喜朱一泰同学获得优秀毕业生！

Haowen Guo, Wenbo Ye, Junmin Zhou, Yitian Gu, Han Gao, and Xinbo Zou*, "Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications", Solid-State Electronics, 2025, accepted.

郭好文发表的题为 "Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications"被Solid-State Electronics接收，恭喜！

Yitai Zhu, Haitao Du, Yu Zhang, Haolan Qu, Han Gao, Haodong Jiang, Wenhui Xu, Xin Ou, and Xinbo Zou*, "Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT", Power Electronic Devices and Components, 2025, accepted.

朱一泰发表的题为 "Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT"被 Power Electronic Devices and Components接收，恭喜！

January， 2025

Wenbo Ye, Junmin Zhou, Han Gao, Haowen Guo, Yitian Gu, and Xinbo Zou*, "1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications", IEEE Transactions on Electron Devices, 2025, accepted.

叶文博发表的题为 "1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications"被IEEE Transactions on Electron Devices接收，恭喜！

October, 2024

Han Gao and Wenbo Ye attended the 11th Asia-Pacific Workshop on Widegap Semiconductors in Busan, South Korea.

高涵和叶文博参加了在韩国釜山举行的第十一届亚太宽禁带半导体研讨会.

November， 2024

Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Ge Yang, Jiaxiang Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng and Xinbo Zou*, "Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga₂O₃ power diode", Materials Science in Semiconductor Processing, 2024, accepted

屈昊岚发表的题为"Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga₂O₃ power diode"的文章被 Materials Science in Semiconductor Processing接收，恭喜！

July, 2024

Haolan Qu, and Yitai Zhu attended to the 18th National Conference on MOCVD (MOCVD) in Hubei.

屈昊岚和朱一泰同学在湖北恩施参加了第十八届全国MOCVD学术会议。

Congratulations to the graduate students of GaNology on their successful graduation!

祝贺GaNology的研究生们顺利毕业！

June, 2024

Haitao Du, Yu Zhang, Junmin Zhou, Jiaxiang Chen, Wenbo Ye, Xu Zhang, Qifeng Lyu, Hongzhi Wang, Kei May Lau, and Xinbo Zou*, "GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Vision System", IEEE Transactions on Nanotechnology, 2024, accepted

May, 2024

·Yu Zhang, Haolan Qu and co-author's paper about "Dyamic Reliability Assessment of Vertical GaN Trench MOSFETs with Thick Bottom Dielectric" was accepted by "IEEE Transactions on Device and Materials Reliability". Congratulations!

·GaNology Lab 张羽，屈昊岚及其合作者的题为“Dyamic Reliability Assessment of Vertical GaN Trench MOSFETs with Thick Bottom Dielectric”的文章，被《IEEE Transactions on Device and Materials Reliability》接收。恭喜！

Congratulations to Associate Professor Xinbo Zou for passing the tenure!

恭喜邹新波副教授通过tenure!

信息学院邹新波课题组实现可模拟视觉感知的氮化镓基人工突触， 新闻稿网址https://mp.weixin.qq.com/s__biz=MzU5MDA3MTQ0Nw==&mid=2247506402& idx=1&sn=cce0157211f18df5ecf9f61c834ecdc2&chksm=fdc14a1acab6c30 c6166ec1f097ff40a129715199094a8a38481f6a66d80c089e5205f0ee24 f&token=1478853713&lang=zh_CN#rd

Congratulations to three doctoral students, Yitian Gu, Yu Zhang, Jiaxiang Chen, and four master's students, Junmin Zhou, Ke Li, Chunlin Du, and Jin Sui, on their successful graduation!

祝贺顾怡恬,张羽,陈嘉祥三位博士生和周隽民,李轲,杜春琳,睢金四位硕士生顺利毕业！

April, 2024

信息学院邹新波课题组在氮化镓常关型凹栅晶体管领域取得科研进展， 新闻稿网址https://sist.shanghaitech.edu.cn/2024/0418/c2858a1093963/page.htm

Congratulations to Zhou Junmin and Zhang Yu for being named outstanding graduates of 2024. Congratulations to Gu Yitian for being named one of the Three Good Students of 2024, and congratulations to Chen Jiaxiang for being recognized as the exemplary Three Good Students of the year.

恭喜周隽民，张羽被评为2024年优秀毕业生，恭喜顾怡恬被评为2024年三好学生，恭喜陈嘉祥被评为三好学生标兵！

·Jiaxiang Chen, Haitao Du and co-author's paper about "AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing" was accepted by "Applied Physics Letters Machine Learning". Congratulations!

·GaNology Lab 陈嘉祥，杜海涛及其合作者的题为“AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing”的文章，被《Applied Physics Letters Machine Learning》接收。恭喜！

·Han Gao, Yitian Gu and co-author's paper about "545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching" was accepted by "IEEE Electron Device Letters". Congratulations!

·GaNology Lab 高涵，顾怡恬及其合作者的题为“545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching”的文章，被《IEEE Electron Device Letters》接收。恭喜！

·Yitai Zhu and co-author's paper about "Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment" was accepted by "Microelectronics Journal". Congratulations!

·GaNology Lab 朱一泰及其合作者的题为“Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment”的文章，被《Microelectronics Journal》接收。恭喜！

·Chunlin Du and co-author's paper about "Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium" was accepted by "Numerical simulation and mathematical modelling". Congratulations!

·GaNology Lab 杜春琳及其合作者的题为“Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium”的文章，被《Numerical simulation and mathematical modelling》接收。恭喜！

March, 2024

·Ke Li and co-author's paper about "Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier" was accepted by "Electronics". Congratulations!

·GaNology Lab 李轲及其合作者的题为“Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier”的文章，被《Electronics》接收。恭喜！

January, 2024

·Jiaxiang Chen and co-author's paper about "Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors" was accepted by "Journal of Applied Physics". Congratulations!

·GaNology Lab 陈嘉祥及其合作者的题为“Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors”的文章，被《Journal of Applied Physics》接收。恭喜！

·Haolan Qu and co-author's paper about "Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures" was accepted by "Journal of Vacuum Science & Technology A". Congratulations!

·GaNology Lab 屈昊岚及其合作者的题为“Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures”的文章，被《Journal of Vacuum Science & Technology A》接收。恭喜！

·Jin Sui and co-author's paper about " Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy" was accepted by " Journal of Semiconductors". Congratulations!

·GaNology Lab 睢金及其合作者的题为“Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy”的文章，被《Journal of Semiconductors》接收。恭喜！

December, 2023

·Congratulations to Yitian Gu, Yu Zhang, Jiaxiang Chen, and Haolan Qu for winning the outstanding student. Congratulations to Junmin Zhou, Jin Sui, Haitao Du, and Yitai Zhu for winning the merit student.

·恭喜顾怡恬，张羽，陈嘉祥与屈昊岚获三好学生，睢金，周隽民，杜海涛与朱一泰获优秀学生称号。

November,2022

·Chen Jiaxiang and Du Haitao gave oral presentations at the ICNS-14, and they were awarded the Best Student Award by the presidium of the conference. More. 

·陈嘉祥和杜海涛在大会做口头报告，经过会议主席团推荐及评审后，均荣获最佳学生奖。

September,2023

·Wenbo Ye officially registered as graduate students of SIST, ShanghaiTech.

​·叶文博正式入学上海科技大学信息学院成为GaNology Lab 的研究生。

·Yu Zhang and co-author's paper about "Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric" was accepted by "IEEE Transactions on Electron Devices". Congratulations!

·GaNology Lab 张羽及其合作者的题为“Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric”的文章，被《IEEE Transactions on Electron Devices》接收。恭喜！

·Jiaxiang Chen and Haitao Du's paper were all accepted by "The 14th International Conference on Nitride Semiconductors (ICNS-14)". Congratulations!

·GaNology Lab 陈嘉祥和杜海涛的两篇文章均被The 14th International Conference on Nitride Semiconductors (ICNS-14)接收。恭喜！

·Haolan Qu's paper about "Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy" was accepted by "Semiconductor Science and Technology". Congratulations to DLTS group!

·GaNology Lab 屈昊岚的题为“Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy”的文章，被《Semiconductor Science and Technology》接收。恭喜DLTS小组！

July,2023

·Junmin Zhou's paper about "RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications" was accepted by "IEEE Electron Device Letters". Congratulations!

·GaNology Lab 周隽民的题为“RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications”的文章，被《IEEE Electron Device Letters》接收。恭喜！

June,2023

·Jin Sui, Jiaxiang Chen, and Haolan Qu attended to China Semiconductor Technology International Conference (CSTIC) in Shanghai.

·睢金，陈嘉祥和屈昊岚同学在上海参加了中国国际半导体技术大会。

May,2023

·Congratulations to Wenhan Song and Lihua Xu, the graduate students of Ganology lab in 2020, for successfully completing their studies.

·祝贺GaNology Lab 2020级硕士研究生（2023级毕业生）宋文涵和徐梨花顺利完成学业。