·Yu Zhang, Min Zhu and Yuliang Zhang's paper about "A Review on GaN-based Two-Terminal Devices Grown on Si Substrates" was accepted by "Journal of Alloys and Compounds". Congratulations!
GaNology Lab 张羽，朱敏和张玉良合作的题为“A Review on GaN-based Two-Terminal Devices Grown on Si Substrates”，被《Journal of Alloys and Compounds》接收。恭喜！
·Congratulations to Yuliang Zhang for winning the national scholarship in 2020.
·Wenhan Song, Lihua Xu and Chunlin Du officially registered as graduate students of SIST, ShanghaiTech.
·宋文涵，徐梨花和杜春琳正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
·Yuliang Zhang, Min Zhu and Jiaxiang's paper about "Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
GaNology Lab 张玉良，朱敏和陈嘉祥合作的题为“Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates”，被《IEEE Transactions on Electron Devices》接收。恭喜！
·Yangqian Wang, Yitian Gu and Haowen Guo's paper about "Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K" was accepted by "IEEE Journal of the Electron Devices Society". Congratulations!
GaNology Lab 王阳倩，顾怡恬和工程师郭好文合作的题为“Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K”，被《IEEE Journal of the Electron Devices Society》接收。恭喜！
Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology that has moved from labs to markets. GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation semiconductor for optoelectronic/power/RF applications and thus different countries are indulged in developing widespread applications of GaN semiconductors.
One should note there are a number of things that cannot YET be made from silicon: Light emitting diodes, Laser diodes, Ultraviolet detectors, very-high speed electronic system (40GHz for fiber telecommunication), high temperature electronics operating above 200 DegC. Again, those are opportunities for GaN and compound semiconductors.
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