·Min Zhu, Jiaxiang Chen and Haowen Guo's paper about "Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes" was accepted by "Microelectronics Reliability". Congratulations!
·GaNology Lab 朱敏、陈嘉祥和郭好文合作的题为“Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes”，被《Microelectronics Reliability》接收。恭喜！
·Congratulations to Yuliang Zhang and Yangqian Wang, the graduate students of Ganology lab in 2018, for successfully completing their studies.
·祝贺GaNology Lab 2018届硕士研究生张玉良，王阳倩顺利完成学业，开启人生新的篇章。
·Congratulations to Yuliang Zhang for winning the outstanding graduates of ShanghaiTech University and Shanghai.
·Haowen Guo and Junmin Zhou's paper about "Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures" was accepted by "IEEE Microwave and Wireless Components Letters". Congratulations!
·GaNology Lab 郭好文和周隽民合作的题为“Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures”，被《IEEE Microwave and Wireless Components Letters》接收。恭喜！
·Yitian Gu, Yangqian Wang and Jiaxiang Chen's paper about "Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
·GaNology Lab 顾怡恬，王阳倩和陈嘉祥合作的题为“Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs”，被《IEEE Transactions on Electron Devices》接收。恭喜！
·We welcome interested and self-motivated graduate student to join our lab. Fluent English will be considered as a plus.
·Jiaxiang Chen, Haolan Qu, Min Zhu, and Haowen Guo's paper about "Single-trap Emission Kinetic of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy" was accepted by "Semiconductor Science and Technology". Congratulations!
·GaNology Lab 陈嘉祥，屈昊岚，朱敏和郭好文合作的题为“Single-trap Emission Kinetic of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy”，被《Semiconductor Science and Technology》接收。恭喜！
·Yu Zhang, Min Zhu and Yuliang Zhang's paper about "A Review on GaN-based Two-Terminal Devices Grown on Si Substrates" was accepted by "Journal of Alloys and Compounds". Congratulations! https://authors.elsevier.com/a/1cjB93IWkc2vkK (This is a Share Link that is created by Elsevier. The link is providing 50 days' free access to our article.)
GaNology Lab 张羽，朱敏和张玉良合作的题为“A Review on GaN-based Two-Terminal Devices Grown on Si Substrates”，被《Journal of Alloys and Compounds》接收。恭喜！
·Congratulations to Yuliang Zhang for winning the national scholarship in 2020.
·Wenhan Song, Lihua Xu and Chunlin Du officially registered as graduate students of SIST, ShanghaiTech.
·宋文涵，徐梨花和杜春琳正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology that has moved from labs to markets. GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation semiconductor for optoelectronic/power/RF applications and thus different countries are indulged in developing widespread applications of GaN semiconductors.
One should note there are a number of things that cannot YET be made from silicon: Light emitting diodes, Laser diodes, Ultraviolet detectors, very-high speed electronic system (40GHz for fiber telecommunication), high temperature electronics operating above 200 DegC. Again, those are opportunities for GaN and compound semiconductors.
Read more about GaN: