About GaN

Gallium nitride

Gallium nitride(GaN)

Gallium nitride (GaN), a wide band gap semiconductor material, is a new technology that has moved from labs to markets. GaN industrial devices offer an advantage with regards to thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation semiconductor for optoelectronic/power/RF applications and thus different countries are indulged in developing widespread applications of GaN semiconductors.


Read more about GaN:

GaN Blue LEDs win 2014 Nobel Prize

GaN: Making the New Si

Go GaN: Go Green

GaN: the most important compound you've heard of


News


November,2022

·Haolan Qu's paper about "Emission and Capture Characteristics of Electron Trap (Eemi=0.8eV) in Si-doped β-Ga2O3 Epilayer" was accepted by "Semiconductor Science and Technology". Congratulations to DLTS group!

·GaNology Lab 屈昊岚的题为“Emission and Capture Characteristics of Electron Trap (Eemi=0.8eV) in Si-doped β-Ga2O3 Epilayer”的文章,被《Semiconductor Science and Technology》接收。恭喜DLTS小组!


September,2022

·Haitao Du, Han Gao and Yitai Zhu officially registered as graduate students of SIST, ShanghaiTech.

​·杜海涛,高涵和朱一泰正式入学上海科技大学信息学院成为GaNology Lab 的研究生。


July,2022

·Yu Zhang and Lihua Xu's paper about "Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer" was accepted by "IEEE Journal of the Electron Devices Society". Congratulations!

·GaNology Lab 张羽与徐梨花合作的题为“Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer”,被《IEEE Journal of the Electron Devices Society》接收。恭喜!


June,2022

·Wenhan Song and Haowen Guo's paper about "Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection" was accepted by "Electronics". Congratulations!

·GaNology Lab 宋文涵与郭好文合作的题为“Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection”,被《Electronics》接收。恭喜!


·Congratulations to Min Zhu for winning the outstanding graduates of ShanghaiTech University.

·恭喜朱敏获得上海科技大学优秀毕业生称号。


May,2022

·Congratulations to Min Zhu, the graduate students of Ganology lab in 2019, for successfully completing their studies.

·祝贺GaNology Lab 2019级硕士研究生(2022级毕业生)朱敏顺利完成学业。


·Jiaxiang Chen and Haolan Qu's paper about "Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy" was accepted by "Applied Physics Letters". Congratulations!

·GaNology Lab 陈嘉祥与屈昊岚合作的题为“Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy”,被《Applied Physics Letters》接收。恭喜!


·Junmin Zhou and Haowen Guo's paper about "Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair" was accepted by "Microelectronics Journal". Congratulations!

·GaNology Lab 周隽民与郭好文合作的题为“Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair”,被《Microelectronics Journal》接收。恭喜!


April,2022

·Yitian Gu's paper about "Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si" was accepted by "IEEE Transactions on Electron Devices". Congratulations!

·GaNology Lab 顾怡恬与课题组其他同学合作的题为“Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si”,被《IEEE Transactions on Electron Devices》接收。恭喜!


January,2022

·Congratulations to Min Zhu for winning the merit student and Jiaxiang Chen & Yu Zhang for winning the outstanding student.

·恭喜朱敏获三好学生,陈嘉祥与张羽获优秀学生称号。


November,2021

· Jiaxiang Chen and Haolan Qu attended to the Photonics in Chemical Physics (PICP 2021).

·陈嘉祥和屈昊岚同学参加了《化学物理光子学》线上会议。

· Jiaxiang Chen and Haolan Qu attended to the Asia Communications and Photonics Conference (ACP 2021) in Shanghai.

·陈嘉祥和屈昊岚同学在上海参加了亚洲光纤通信与光电国际会议。

· Jiaxiang Chen and Haolan Qu attended to the national wide bandgap semiconductor conference in Xiamen.

·陈嘉祥和屈昊岚同学在厦门参加了第四届全国宽禁带半导体学术会议。


August,2021

·Min Zhu, Jiaxiang Chen and Haowen Guo's paper about "Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes" was accepted by "Microelectronics Reliability". Congratulations!

·GaNology Lab 朱敏、陈嘉祥和郭好文合作的题为“Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes”,被《Microelectronics Reliability》接收。恭喜!

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