2024

93. Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Ge Yang, Jiaxiang Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng and Xinbo Zou*, "Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode", Materials Science in Semiconductor Processing, 2024, vol.187, p.109121.DOI:10.1016/j.mssp.2024.109121.

92. Haitao Du, Yu Zhang, Junmin Zhou, Jiaxiang Chen, Wenbo Ye, Xu Zhang, Qifeng Lyu, Hongzhi Wang, Kei May Lau, and Xinbo Zou*, "GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System", IEEE Transactions on Nanotechnology, 2024, 23:529-534.DOI:10.1109/TNANO.2024.3416509.

91. Yu Zhang, Renqiang Zhu, Haolan Qu, Yitian Gu, Huaxing Jiang, Kei May Lau, and Xinbo Zou*, "Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs with Thick Bottom Dielectric", IEEE Transactions on Device and Materials Reliability, 2024, pp:1-1. DOI: 10.1109/TDMR.2024.3408293.

90. Jiaxiang Chen#, Haitao Du#, Haolan Qu, Han Gao, Yitian Gu, Yitai Zhu, Wenbo Ye, Jun Zou, Hongzhi Wang, and Xinbo Zou*, "AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing", Applied Physics Letters Machine Learning, 2024, 2(2), 026113. DOI:10.1063/5.0194083.

89. Han Gao#, Yitian Gu#, Yu Zhang, Jialun Li, Junmin Zhou, Haowen Guo, Kei May Lau, and Xinbo Zou*, "545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching", IEEE Electron Device Letters, 2024, 45(6): 968-971. DOI: 10.1109/LED.2024.3386824.

88. Yitai Zhu, Yu Zhang, Haolan Qu, Han Gao, Haitao Du, Haowen Guo, and Xinbo Zou*, "Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment", Microelectronics Journal, 2024, 148, 106191. DOI: 10.1016/j.mejo.2024.106191.

87. Chunlin Du, Yu Zhang, Haolan Qu, Haowen Guo, and Xinbo Zou*, "Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium", Numerical simulation and mathematical modelling, 2024, 19(1): 456–474. DOI: 10.3934/nhm.2024020.

86. Ke Li, Yitian Gu, Haowen Guo, and Xinbo Zou*, "Nonlinear Capacitance Compensation Method for Integrating a Metal–Semiconductor–Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier", Electronics, 2024, 13(7), 1265. DOI: 10.3390/electronics13071265.

85. Jiaxiang Chen, Haolan Qu, Jin Sui, Xing Lu, Xinbo Zou*, "Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors", Journal of Applied Physics, 2024, 135 (8), 085702. DOI: 10.1063/5.0185492.

84. Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou*, "Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures", Journal of Vacuum Science & Technology A, 2024, 42 (2), 023418. DOI: 10.1116/6.0003298.

84. Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, and Xinbo Zou*, "Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy", Journal of Semiconductors, 2024, 45(3), 032503. DOI: 10.1088/1674-4926/45/3/032503.

83. Leidang Zhou, Hao Chen, Tongling Xu, Jinlu Ruan, Yuru Lai, Yuxin Deng, Jiaxiang Chen, Xinbo Zou, Xing Lu, Liang Chen, and Xiaoping Ouyang, "Radiation effects of high-fluence reactor neutron on Ni/β-Ga2O3 Schottky barrier diodes", Applied Physics Letters, 2024, 124 (1), 013506. DOI: 10.1063/5.0185271.

2023

82. Yu Zhang, Yitian Gu, Yitai Zhu, Baile Chen, Huaxing Jiang*, Kei May Lau*, and Xinbo Zou*, "Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric", IEEE Transactions on Electron Devices, vol. 70, no. 11, pp. 5590-5595, Nov. 2023, doi: 10.1109/TED.2023.3313999.

81. Junmin Zhou, Haowen Guo, Haitao Du, Yu Zhang, Haolan Qu, Wei Huang, Jianjun Zhou, Zhiqiang Xiao, and Xinbo Zou*, "RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications", IEEE Electron Device Letters, vol. 44, no. 9, pp. 1412-1415, Sept. 2023, doi: 10.1109/LED.2023.3294696.

80. Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, and Xinbo Zou*, "Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy", Semiconductor Science and Technology, 38, 105010 (2023), DOI: 10.1088/1361-6641/acf608.

79. Jiaxiang Chen, Jin Sui, Haolan Qu, and Xinbo Zou*, "Emission and Capture Kinetics of Minority Carrier Trap in GaN Devices by Optical DLTS", The 14th International Conference on Nitride Semiconductors (ICNS-14), November 12-17, 2023, Fukuoka, Japan.

78. Haitao Du, Xu Zhang, Qifeng Lyu, Kei May Lau, and Xinbo Zou*, "High-Performance Machine Vision System by GaN n-i-n Nanowire", The 14th International Conference on Nitride Semiconductors (ICNS-14), November 12-17, 2023, Fukuoka, Japan

77. Jin Sui#, Jiaxiang Chen#, Haolan Qu, Ruohan Zhang, Min Zhu, Xing Lu, and Xinbo Zou*, "Neutron Irradiation Induced Carrier Removal and Deep-level Traps in n-GaN Schottky Barrier Diodes", China Semiconductor Technology International Conference (CSTIC), Shanghai, China, June 26-27, 2023.

76. Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Yitian Gu, Yuxin Deng, Danni Su, Ruohan Zhang, Xing Lu, and Xinbo Zou*, "Emission and Capture Characteristics of Electron Trap (Eemi=0.8eV) in Si-doped β-Ga2O3 Epilayer", Semiconductor Science and Technology, 38, 015001 (2023), DOI: 10.1088/1361-6641/aca045

75. Tianyu Long, Zhiyang Xie, Linze Li, Luyu Wang, Xinbo Zou, Haiming Ji, Juanjuan Lu, and Baile Chen, "High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking," Journal of Lightwave Technology (Early Access), DOI: 10.1109/JLT.2023.3328899.

74. Zhijian Shen, Jinshan Yao, Jian Huang, Zhecheng Dai, Luyu Wang, Fengyu Liu, Xinbo Zou, Bo Peng, Weimin Liu, Hong Lu, Baile Chen, "High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector with Inductive Peaked Dewar Packaging," Journal of Lightwave Technology (Early Access), DOI: 10.1109/JLT.2023.3322967.

73. Xiazhi Zou, Jiayi Yang, Qifeng Qiao, Xinbo Zou, Jiaxiang Chen, Yang Shi, and Kailin Ren, "Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review", Micromachines 2023, 14(11), 2044; DOI: 10.3390/mi14112044.

72. Luyu Wang, Zhiyang Xie, Beibei Pan, Zhiqi Zhou, Linze Li, Xinbo Zou, Haiming Ji, and Baile Chen, "High-Speed Photodetector With Simultaneous Electrical Power Generation," Journal of Lightwave Technology, vol. 41, no. 2, pp. 662-670, 15 Jan.15, 2023, DOI: 10.1109/JLT.2022.3216839.

71. Jing Wang, Leidang Zhou, Xing Lu, Liang Chen, Zimin Chen, Xinbo Zou, Gang Wang, Boming Yang, and Xiaoping Ouyang, "Pulsed X-Ray Detector Based on an Unintentionally-Doped High Resistivity ε-Ga₂O₃ Film," IEEE Photonics Technology Letters, vol. 35, no. 2, pp. 89-92, 15 Jan.15, 2023, DOI: 10.1109/LPT.2022.3224014.

2022

70. Yu Zhang#, Lihua Xu#, Yitian Gu, Haowen Guo, Huaxing Jiang*, Kei May Lau*, and Xinbo Zou*, "Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer", IEEE Journal of the Electron Devices Society, vol. 10, pp. 540-546, 2022, DOI: 10.1109/JEDS.2022.3189819.

69. Wenhan Song, Haowen Guo, Yitian Gu, Junmin Zhou, Jin Sui, Baile Chen, Wei Huang, and Xinbo Zou*, "Power Compression and Phase Analysis of GaN HEMT for Microwave Limiter Applications", Electronics, 11(13), 1958, 2022, DOI: 10.3390/electronics11131958

68. Jiaxiang Chen, Wei Huang, Haolan Qu, Yu Zhang, Jianjun Zhou, Baile Chen, and Xinbo Zou*, "Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy", Applied Physics Letters, 120, 212105 (2022), DOI: 10.1063/5.0083362

67. Junmin Zhou, Haowen Guo, Yitian Gu, and Xinbo Zou*, "Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair", Microelectronics Journal, 125, 105464 (2022), DOI: 10.1016/j.mejo.2022.105464

66. Yitian Gu#, Wei Huang#*, Yu Zhang, Jin Sui, Yangqian Wang, Haowen Guo, Jianjun Zhou, Baile Chen, and Xinbo Zou*, "Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si", IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3302-3309, June 2022, doi: 10.1109/TED.2022.3167342.

65. Yijun Qian; Yuan Gao; Amit Kumar Shukla; Lu Sun; Xinbo Zou, Tao Wu; Zhiqiang Mu, Kai Lu; Yemin Dong; Xing Wei, and Yumeng Yang, "Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs", IEEE Transactions on Electron Devices, 2022, doi: 10.1109/TED.2022.3204513 (Early Access)

64. Peng Wang, Yizhou Jiang, Yitian Gu, Menglin Huang, Wei Huang, Shiyou Chen, Zhiqiang Xiao, Xinbo Zou, Yiwu Qiu, Xinjie Zhou, Jianjun Zhou, and David Wei Zhang, "Investigation of trapping effects in Schottky lightly doped P-GaN gate stack under γ-ray irradiation", Applied Physics Letters, 121, 143501 (2022), DOI: 10.1063/5.0094090

63. Linze Li, Rui Pan, Zhiyang Xie, Yao Lu, Jiaxiang Chen, Xinbo Zou, Ziyuan Yuan, Menglin Chang, Hong Lu, and Baile Chen, "High-speed Ge-on-GaAs photodetector", Optics Express, Vol. 30, Issue 12, pp. 20684-20696 (2022), DOI: 10.1364/OE.459664

62. Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang, Ruiliang Xu, Yu Zhao, Xiaoshen Kang, Chenxi Fu, Weimin Song, Zhenzhong Zhang, Ruirui Fan, Xinbo Zou and Xin Shi, " Timing Performance Simulation for 3D 4H-SiC Detector", Micromachines, 2022, 13, 46, DOI: 10.3390/mi13010046

61. Jingyi Wang, Zhiyang Xie, Liqi Zhu, Xinbo Zou, Xuyi Zhao, Wenfu Yu, Ruotao Liu, Antian Du, Qian Gong, and Baile Chen, "InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice," IEEE Electron Device Letters, vol. 43, no. 5, pp. 757-760, May 2022, DOI: 10.1109/LED.2022.3162246.

2021

60. Jiaxiang Chen, Haolan Qu, Xinbo Zou*, "Study of Traps in p-GaN Gate HEMT by Optical DLTS", Photonics in Chemical Physics (PICP 2021), Sep 26-28, Virtual Conference

59. Jiaxiang Chen, Haolan Qu, Xing Lu, Xinbo Zou*, "Electrical Characterization of Vertical β-Ga₂O3 SBD w/o epi-layer", National Wide bandgap Semiconductor Conference (WBGS 2021), Nov. 7-10, Fujian, China.

58. Jiaxiang Chen#, Haolan Qu#, Longheng Qi, Yaying Liu, Xu Zhang, Kei May Lau*, Xinbo Zou*, "Trap Characterization of InGaN/GaN Blue Light Emitting Diode on Si Substrate", Asia Communications and Photonics Conference (ACP 2021), Oct 24-27, Shanghai, China, doi:10.1364/ACPC.2021.T4A.220.

57. Min Zhu#, Yuan Ren#,Leidang Zhou, Jiaxiang Chen, Haowen Guo, Liqi Zhu, Baile Chen, Liang Chen,Xing Lu* and Xinbo Zou*, "Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes", Microelectronics Reliability, 125, 114345 (2021), DOI: 10.1016/j.microrel.2021.114345

56. Yitian Gu, Yangqian Wang#, Jiaxiang Chen, Baile Chen, Maojun Wang* and Xinbo Zou*, "Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs", IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3290-3295, July 2021, DOI:10.1109/TED.2021.3077345

55. Haowen Guo, Junmin Zhou, Maojun Wang* and Xinbo Zou*, "Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures", IEEE Microwave and Wireless Components Letters, vol. 31, no. 11, pp. 1219-1222, Nov. 2021, DOI: 10.1109/LMWC.2021.3079222

54. Jiaxiang Chen, Haoxun Luo, HaoLan Qu, Min Zhu, Haowen Guo, Baile Chen, Yuanjie Lv, Xing Lu* and Xinbo Zou*, "Single-trap Emission Kinetics of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy", Semiconductor Science and Technology, 36 (2021) 055015, DOI: 10.1088/1361-6641/abed8d

53. Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang, and Xinbo Zou*, "(invited) A Review on GaN-based Two-Terminal Devices Grown on Si Substrates", Journal of Alloys and Compounds, 869 (2021) 159214, DOI: 10.1016/j.jallcom.2021.159214

52. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Chunfang Cao, Xinbo Zou, Fengyu Liu, Qian Gong, and Baile Chen, " Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate", Applied Physics Letters, 118, 081102 (2021), DOI: 10.1063/5.0038844

51. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Lu Yao, Xinbo Zou, Chunfang Cao, Qian Gong, and Baile Chen, "Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector," Journal of Lightwave Technology, vol. 39, no. 5, pp. 1489-1496, 1 March1, 2021, DOI: 10.1109/JLT.2020.3034657.

2020

50. Yuliang Zhang, Xu Zhang, Min Zhu, Jiaxiang Chen, Chak Wah Tang, Kei May Lau, Xinbo Zou*, "Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates", IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 3992-3998, Oct. 2020, DOI: 10.1109/TED.2020.3012422

49. Yangqian Wang, Yitian Gu#, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou*, "Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K", IEEE Journal of the Electron Devices Society, Vol. 8, pp.850-856, 2020. DOI: 10.1109/JEDS.2020.3013656

48. Jiaxiang Chen, Min Zhu, Xing Lu, and Xinbo Zou*, "Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures", Appl. Phys. Lett. 116, 062102 (2020), DOI: 10.1063/1.5131337

47. Xinbo Zou*, Xu Zhang, Yu Zhang, Qifeng Lyu, Chak Wah Tang, and Kei May Lau*, "GaN Single Nanowire p–i–n Diode for High-Temperature Operations", ACS Applied Electronic Materials, 2020 2 (3), 719-724, DOI: 10.1021/acsaelm.9b00801

46. Xing Lu, Huaxing Jiang, Leidang Zhou, Jin Wu, Xu Zhang, Xinbo Zou, Gang Wang and Kei May Lau*, "Vertical β-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance", Phys. Status Solidi A, 217(3): 1900497,2020, DOI: 10.1002/pssa.201900497

45. Yangqian Wang, Yuliang Zhang, Yang A. Yang, Xing Lu, Xinbo Zou*, "Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication", Cogent Engineering, 7, 1 (2020): 1764171. DOI: 10.1080/23311916.2020.1764171

44. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Lu Yao, Xinbo Zou, Chun-Fang Cao, Qian Gong and Baile Chen*, "Long-wave infrared sub-monolayer quantum dot quantum cascade photodetector", Journal of Lightwave Technology, doi: 10.1109/JLT.2020.3034657. (Early Access)

43. Z. Xie, Z. Deng, X. Zou and B. Chen*, "InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector", IEEE Photonics Technology Letters, vol. 32, no. 16, pp. 1003-1006, 15 Aug.15, 2020, doi: 10.1109/LPT.2020.3008853.

2019

42. Yuliang Zhang, Xing Lu, Xinbo Zou*, "Device Design Assessment of GaN Merged P-i-N Schottky Diodes", Electronics 2019, 8(12), 1550. DOI: 10.3390/electronics8121550

41. Xu Zhang, Peian Li, Xinbo Zou, Junmin Jiang, Shing Hin Yuen, Chak Wah Tang, and Kei May Lau*, "Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers", IEEE Photonics Technology Letters, Vol. 31, No. 11, pp.865-868, 2019. DOI: 10.1109/LPT.2019.2910729 #Corresponding Author

40. Yangqian Wang, Yuliang Zhang, Yang A. Yang, Xing Lu, Xinbo Zou*, "Simulation Study of Front-illuminated GaN Avalanche Photodiodes with Hole-initiated Multiplication" Compound Semiconductor Week (CSW 2019)， 19th -23rd, May, 2019, Nara, Japan.

2018

39. Yuliang Zhang, Xinbo Zou*, "Device Design Assessment of GaN Junction Barrier Schottky Diodes", International Workshop on Nitride Semiconductors (IWN-2018), 10th – 16th November, Kanazawa, Japan

38. Xu Zhang, Peian Li, Xinbo Zou, Junmin Jiang, Shing Hin Yuen, Chak Wah Tang, and Kei May Lau*, "Active Matrix LED Micro Display using GaN-on-Si epilayers", International Workshop on Nitride Semiconductors (IWN-2018), 10th – 16th November, Kanazawa, Japan

2017

37. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau#, "Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters", IEEE Electron Device Letters, Vol. 39, No. 2, pp.224-227, 2017. DOI: 10.1109/LED.2017.2781247 #Corresponding Author

36. Xu Zhang*, Xinbo Zou*#, Xing Lu, Chak Wah Tang, and Kei May Lau#, "Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison", IEEE Transactions on Electron Devices, Vol. 64, No. 3, pp.809-815, 2017. DOI: 10.1109/TED.2017.2647990 #Corresponding Author

35. Yuefei Cai, Xinbo Zou, Yuan Gao; Lisong Li; Philip K. T. Mok; Kei May Lau, "Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-free Driver", accepted by IEEE Photonics Technology Letter; doi: 10.1109/LPT.2017.2742861.

34. Pak San Yip, Xinbo Zou#, Wai Ching Cho, Kam Lam Wu and Kei May Lau# "Transistors and Tunnel Diodes Enabled by Large-Scale MoS2 Nanosheets Grown on GaN", Semiconductor Science and Technology, Vol.32, No. 7, 2017, 2017, DOI: 10.1088/1361-6641/aa7247, #Corresponding Author

33. Xu Zhang, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si", Phys. Status Solidi A, 1600817. DOI:10.1002/pssa.201600817

32. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, "High Performance Monolithically Integrated GaN Driving VMOSFET on LED", IEEE Electron Device Letters, vol. 38, no. 6, pp. 752-755, 2017. DOI: 10.1109/LED.2017.2691908

31. Xu Zhang, Xinbo Zou, Qifeng Lyu, Chak Wah Tang , Kei May Lau, "Top-down III-N single nanowire p-i-n photodetector", International Conference on Nitride Semiconductors (ICNS-12) 24th -28th, July 2017, Strasbourg, France.

2016

30. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, "Breakdown Ruggedness of Quasi-vertical GaN-based p-i-n Diodes on Si substrates", IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1158-1161, Sept. 2016. DOI: 10.1109/LED.2016.2594821.

29. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, "Vertical LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers and Au-free Bonding", IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1587-1593, April 2016. DOI: 10.1109/TED.2016.2526685.

28. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, "Fully-vertical GaN p-i-n Diodes using GaN-on-Si Epilayers", IEEE Electron Device Letters, vol. 37, No. 5, pp. 636-639, May, 2016. DOI: 10.1109/LED.2016.2548488.

27. Xinbo Zou*, Yuefei Cai*, Wing Cheung Chong, and Kei May Lau, "Fabrication and Characterization of High Voltage LEDs using Photoresist-filled-trench Technique", IEEE/OSA Journal of Display Technology, vol. 12, no. 4, pp. 397-401, April 2016; DOI: 10.1109/JDT.2015.2493368. *equal contribution

26. Yuefei Cai*, Xinbo Zou*, Wing Cheung Chong, and Kei May Lau, "Optimization of Electrode Structure for Flip Chip HVLED via Two-level Metallization", Physica status solidi. A, Applications and materials science, Jan, 2016. DOI: 10.1002/pssa.201532803 *equal contribution.

25. Chao Liu, Yuefei Cai, Xinbo Zou, Kei May Lau, "Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode", IEEE Photonics Technology Letters, Vol. 28, No. 10, 2016. DOI: 10.1109/LPT.2016.2532338.

24. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, "Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate", Applied Physics Express, Volume 9, No. 3, 031001, 2016.

23. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, "Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate annealing", Semiconductor Science and Technology, Vol. 31, No. 5, 2016. DOI: 10.1088/0268-1242/31/5/055019

22. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, "Monolithic Integration of GaN-based LED with E-mode Vertical Driving MOSFET", Applied Physics Letters 109, 053504 (2016), DOI: 10.1063/1.4960105.

21. Xu Zhang, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si", International Workshop on Nitride Semiconductors (IWN-2016), 2nd – 7th October, Florida, US

20. Yuefei Cai, Xinbo Zou, Yuan Gao; Lisong Li; Philip K. T. Mok; Kei May Lau, "Efficient Use of Uniform GaN HVLEDs for Small-Flicker General Illumination Applications with Converter-free LED Drivers," Compound Semiconductor Week, July, 2016, Toyama, Japan.

More

19.Bei Shi, Qiang Li, Yating Wan, Kar Wei Ng, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "InAlGaAs/InAlAs MQWs on Si Substrate", IEEE Photonics Technology Letters, Vol.27, No.7, pp.748-751, 2015. DOI: 10.1109/LPT.2015.2391099

18.Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau, "Growth and Characterization of Horizontal GaN Wires on Silicon", Applied Physics Letters, 104 (26), June 2014. DOI:10.1063/1.4886126

17.Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer", physica status solidi (c) 11 (3-4),730, 2014.DOI: 10.1002/pssc.201300506

16.Xinbo Zou, Ka Ming Wong, Xueliang Zhu, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates", IEEE Electron Device Letters, vol.34, no.7, pp.903, July 2013. DOI: 10.1109/LED.2013.2260126.

15.Jun Ma, Xueliang Zhu, Ka Ming Wong, Xinbo Zou, and Kei May Lau, "Improved GaN-based LED grown on Silicon (111) substrates using stress/dislocation-engineered interlayers", Journal of Crystal Growth, Vol.370, pp.265-268, 2013. DOI:10.1016/j.jcrysgro.2012.10.028

14. Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, Kei May Lau, "Improved Crystalline Quality and Light Output Power of GaN-based LEDs Grown on Si by Buffer Optimization", Physica Status Solidi (c), Volume 9 Issue 3-4, pp. 572, Mar 2012. DOI: 10.1002/pssc.201100442

13. Kei May Lau, Ka Ming Wong, Xinbo Zou, and Peng Chen, "Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper", Optics Express, Vol. 19, Issue S4, pp. A956-A961, 2011. DOI: 10.1364/OE.19.00A956

12. Xinbo Zou, Hu Liang and Kei May Lau, "Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution", Physica Status Solidi (c), Vol. 7, No.7-8, pp. 2171, 2010. DOI: 10.1002/pssc.200983527

11. Ka Ming Wong, Xinbo Zou, Chen Peng, and Kei May Lau, "Transfer of GaN- based light-emitting diodes from silicon growth substrate to copper", IEEE Electron Device Letters, Vol. 31, No. 2, 2010. DOI: 10.1109/LED.2009.2037346

10.Dongmei Deng, Naisen Yu, Yong Wang, Xinbo Zou, Hao-chung Kuo, Peng Chen, and Kei May Lau, "InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates", Applied Physics Letters 96(20): 201106, 2010. DOI: 10.1063/1.3427438

9. Yuefei Cai, Xinbo Zou, et al., “Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap”, 11th International Conference on Nitride Semiconductors (ICNS-11), 30th Aug. – 4th Sep. 2015, Beijing, China.

8. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, “High Efficiency Vertical-injection LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30th Aug. – 4th Sep. 2015.

7. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau “Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA” ICNS-11, 30th Aug. – 4th Sep. 2015, Beijing, China.

6. Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau, "Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO2 Patterned GaN/Si Templates", 56th Electronic Materials Conference (EMC), June 25-27, 2014, Santa Barbara, US.

5. Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer", 10th International Conference on Nitride Semiconductors (ICNS-10), August 25-30, 2013, Washington, D.C, US.

4. Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, Kei May Lau, "Improved Crystalline Quality and Light Output Power of GaN-based LEDs Grown on Si by Buffer Optimization", 9th Semiconductors International Conference on Nitride (ICNS-9), July, 2011,UK.

3. Dongmei Deng, Naisen Yu,Yong Wang, Xinbo Zou, Peng Chen, and Kei May Lau, "III-Nitride LEDs Grown on Porous Si Substrates", 15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, United States, May 2010.

2. Xinbo Zou, Hu Liang and Kei May Lau, "Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution", 8th International Conference on Nitride Semiconductors (ICNS-8), 18-23 October, 2009, Jeju, Korea.

1. Ka Ming Wong, Xinbo Zou, Chen Peng, and Kei May Lau, "GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power", 36th International Symposium on Compound Semiconductors (ISCS), Aug.,2009, US.