List of publication:


2021

59. Jiaxiang Chen, Haolan Qu, Xinbo Zou*, "Study of Traps in p-GaN Gate HEMT by Optical DLTS", Photonics in Chemical Physics (PICP 2021), Sep 26-28, Virtual Conference


58. Jiaxiang Chen, Haolan Qu, Xing Lu, Xinbo Zou*, "Electrical Characterization of Vertical β-Ga2O3 SBD w/o epi-layer", National Wide bandgap Semiconductor Conference (WBGS 2021), Nov. 7-10, Fujian, China.


57. Jiaxiang Chen#, Haolan Qu#, Longheng Qi, Yaying Liu, Xu Zhang, Xinbo Zou*, "Trap Characterization of InGaN/GaN Blue Light Emitting Diode on Si Substrate", Asia Communications and Photonics Conference (ACP 2021), Oct 24-27, Shanghai, China.


56. Min Zhu#, Yuan Ren#,Leidang Zhou, Jiaxiang Chen, Haowen Guo, Liqi Zhu, Baile Chen, Liang Chen,Xing Lu* and Xinbo Zou*, "Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes", Microelectronics Reliability, 125, 114345 (2021), DOI: 10.1016/j.microrel.2021.114345


55. Yitian Gu, Yangqian Wang#, Jiaxiang Chen, Baile Chen, Maojun Wang* and Xinbo Zou*, "Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs", IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3290-3295, July 2021, DOI:10.1109/TED.2021.3077345


54. Haowen Guo, Junmin Zhou, Maojun Wang* and Xinbo Zou*, "Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures", IEEE Microwave and Wireless Components Letters, vol. 31, no. 11, pp. 1219-1222, Nov. 2021, DOI: 10.1109/LMWC.2021.3079222


53. Jiaxiang Chen, Haoxun Luo, HaoLan Qu, Min Zhu, Haowen Guo, Baile Chen, Yuanjie Lv, Xing Lu* and Xinbo Zou*, "Single-trap Emission Kinetics of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy", Semiconductor Science and Technology, 36 (2021) 055015, DOI: 10.1088/1361-6641/abed8d


52. Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang, and Xinbo Zou*, "(invited) A Review on GaN-based Two-Terminal Devices Grown on Si Substrates", Journal of Alloys and Compounds, 869 (2021) 159214, DOI: 10.1016/j.jallcom.2021.159214


51. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Chunfang Cao, Xinbo Zou, Fengyu Liu, Qian Gong, and Baile Chen, " Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate", Applied Physics Letters, 118, 081102 (2021), DOI: 10.1063/5.0038844


2020

50. Yuliang Zhang, Xu Zhang, Min Zhu, Jiaxiang Chen, Chak Wah Tang, Kei May Lau, Xinbo Zou*, "Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates", IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 3992-3998, Oct. 2020, DOI: 10.1109/TED.2020.3012422


49. Yangqian Wang, Yitian Gu#, Xing Lu, Huaxing Jiang, Haowen Guo, Baile Chen, Kei May Lau, Xinbo Zou*, "Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K", IEEE Journal of the Electron Devices Society, Vol. 8, pp.850-856, 2020. DOI: 10.1109/JEDS.2020.3013656


48. Jiaxiang Chen, Min Zhu, Xing Lu, and Xinbo Zou*, "Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures", Appl. Phys. Lett. 116, 062102 (2020), DOI: 10.1063/1.5131337


47. Xinbo Zou*, Xu Zhang, Yu Zhang, Qifeng Lyu, Chak Wah Tang, and Kei May Lau*, "GaN Single Nanowire p–i–n Diode for High-Temperature Operations", ACS Applied Electronic Materials, 2020 2 (3), 719-724, DOI: 10.1021/acsaelm.9b00801


46. Xing Lu, Huaxing Jiang, Leidang Zhou, Jin Wu, Xu Zhang, Xinbo Zou, Gang Wang and Kei May Lau*, "Vertical β-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance", Phys. Status Solidi A, 217(3): 1900497,2020, DOI: 10.1002/pssa.201900497


45. Yangqian Wang, Yuliang Zhang, Yang A. Yang, Xing Lu, Xinbo Zou*, "Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication", Cogent Engineering, 7, 1 (2020): 1764171. DOI: 10.1080/23311916.2020.1764171


44. Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Lu Yao, Xinbo Zou, Chun-Fang Cao, Qian Gong and Baile Chen*, "Long-wave infrared sub-monolayer quantum dot quantum cascade photodetector", Journal of Lightwave Technology, doi: 10.1109/JLT.2020.3034657. (Early Access)


43. Z. Xie, Z. Deng, X. Zou and B. Chen*, "InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Photodetector", IEEE Photonics Technology Letters, vol. 32, no. 16, pp. 1003-1006, 15 Aug.15, 2020, doi: 10.1109/LPT.2020.3008853.


2019

42. Yuliang Zhang, Xing Lu, Xinbo Zou*, "Device Design Assessment of GaN Merged P-i-N Schottky Diodes", Electronics 2019, 8(12), 1550. DOI: 10.3390/electronics8121550


41. Xu Zhang, Peian Li, Xinbo Zou, Junmin Jiang, Shing Hin Yuen, Chak Wah Tang, and Kei May Lau*, "Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers", IEEE Photonics Technology Letters, Vol. 31, No. 11, pp.865-868, 2019. DOI: 10.1109/LPT.2019.2910729 #Corresponding Author


40. Yangqian Wang, Yuliang Zhang, Yang A. Yang, Xing Lu, Xinbo Zou*, "Simulation Study of Front-illuminated GaN Avalanche Photodiodes with Hole-initiated Multiplication" Compound Semiconductor Week (CSW 2019), 19th -23rd, May, 2019, Nara, Japan.


2018

39. Yuliang Zhang, Xinbo Zou*, "Device Design Assessment of GaN Junction Barrier Schottky Diodes", International Workshop on Nitride Semiconductors (IWN-2018), 10th – 16th November, Kanazawa, Japan


38. Xu Zhang, Peian Li, Xinbo Zou, Junmin Jiang, Shing Hin Yuen, Chak Wah Tang, and Kei May Lau*, "Active Matrix LED Micro Display using GaN-on-Si epilayers", International Workshop on Nitride Semiconductors (IWN-2018), 10th – 16th November, Kanazawa, Japan


2017

37. Yuefei Cai, Xinbo Zou, Chao Liu, and Kei May Lau#, "Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters", IEEE Electron Device Letters, Vol. 39, No. 2, pp.224-227, 2017. DOI: 10.1109/LED.2017.2781247 #Corresponding Author


36. Xu Zhang*, Xinbo Zou*#, Xing Lu, Chak Wah Tang, and Kei May Lau#, "Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison", IEEE Transactions on Electron Devices, Vol. 64, No. 3, pp.809-815, 2017. DOI: 10.1109/TED.2017.2647990 #Corresponding Author


35. Yuefei Cai, Xinbo Zou, Yuan Gao; Lisong Li; Philip K. T. Mok; Kei May Lau, "Low-Flicker Lighting from High-Voltage LEDs Driven by a Single Converter-free Driver", accepted by IEEE Photonics Technology Letter; doi: 10.1109/LPT.2017.2742861.


34. Pak San Yip, Xinbo Zou#, Wai Ching Cho, Kam Lam Wu and Kei May Lau# "Transistors and Tunnel Diodes Enabled by Large-Scale MoS2 Nanosheets Grown on GaN", Semiconductor Science and Technology, Vol.32, No. 7, 2017, 2017, DOI: 10.1088/1361-6641/aa7247, #Corresponding Author


33. Xu Zhang, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si", Phys. Status Solidi A, 1600817. DOI:10.1002/pssa.201600817


32. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, "High Performance Monolithically Integrated GaN Driving VMOSFET on LED", IEEE Electron Device Letters, vol. 38, no. 6, pp. 752-755, 2017. DOI: 10.1109/LED.2017.2691908


31. Xu Zhang, Xinbo Zou, Qifeng Lyu, Chak Wah Tang , Kei May Lau, "Top-down III-N single nanowire p-i-n photodetector", International Conference on Nitride Semiconductors (ICNS-12) 24th -28th, July 2017, Strasbourg, France.


2016

30. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, "Breakdown Ruggedness of Quasi-vertical GaN-based p-i-n Diodes on Si substrates", IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1158-1161, Sept. 2016. DOI: 10.1109/LED.2016.2594821.


29. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, "Vertical LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers and Au-free Bonding", IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1587-1593, April 2016. DOI: 10.1109/TED.2016.2526685.


28. Xinbo Zou, Xu Zhang, Xing Lu, Chak Wah Tang, and Kei May Lau, "Fully-vertical GaN p-i-n Diodes using GaN-on-Si Epilayers", IEEE Electron Device Letters, vol. 37, No. 5, pp. 636-639, May, 2016. DOI: 10.1109/LED.2016.2548488.


27. Xinbo Zou*, Yuefei Cai*, Wing Cheung Chong, and Kei May Lau, "Fabrication and Characterization of High Voltage LEDs using Photoresist-filled-trench Technique", IEEE/OSA Journal of Display Technology, vol. 12, no. 4, pp. 397-401, April 2016; DOI: 10.1109/JDT.2015.2493368. *equal contribution


26. Yuefei Cai*, Xinbo Zou*, Wing Cheung Chong, and Kei May Lau, "Optimization of Electrode Structure for Flip Chip HVLED via Two-level Metallization", Physica status solidi. A, Applications and materials science, Jan, 2016. DOI: 10.1002/pssa.201532803 *equal contribution.


25. Chao Liu, Yuefei Cai, Xinbo Zou, Kei May Lau, "Low-leakage High-breakdown Laterally Integrated HEMT-LED via n-GaN Electrode", IEEE Photonics Technology Letters, Vol. 28, No. 10, 2016. DOI: 10.1109/LPT.2016.2532338.


24. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, "Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate", Applied Physics Express, Volume 9, No. 3, 031001, 2016.


23. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau, "Off-state Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-gate annealing", Semiconductor Science and Technology, Vol. 31, No. 5, 2016. DOI: 10.1088/0268-1242/31/5/055019


22. Xing Lu, Chao Liu, Huaxing Jiang, Xinbo Zou, Anping Zhang, and Kei May Lau, "Monolithic Integration of GaN-based LED with E-mode Vertical Driving MOSFET", Applied Physics Letters 109, 053504 (2016), DOI: 10.1063/1.4960105.


21. Xu Zhang, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "Switching Performance of Quasi-vertical GaN-based p-i-n Diodes on Si", International Workshop on Nitride Semiconductors (IWN-2016), 2nd – 7th October, Florida, US


20. Yuefei Cai, Xinbo Zou, Yuan Gao; Lisong Li; Philip K. T. Mok; Kei May Lau, "Efficient Use of Uniform GaN HVLEDs for Small-Flicker General Illumination Applications with Converter-free LED Drivers," Compound Semiconductor Week, July, 2016, Toyama, Japan.


More

19.Bei Shi, Qiang Li, Yating Wan, Kar Wei Ng, Xinbo Zou, Chak Wah Tang, and Kei May Lau, "InAlGaAs/InAlAs MQWs on Si Substrate", IEEE Photonics Technology Letters, Vol.27, No.7, pp.748-751, 2015. DOI: 10.1109/LPT.2015.2391099


18.Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau, "Growth and Characterization of Horizontal GaN Wires on Silicon", Applied Physics Letters, 104 (26), June 2014. DOI:10.1063/1.4886126


17.Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer", physica status solidi (c) 11 (3-4),730, 2014.DOI: 10.1002/pssc.201300506


16.Xinbo Zou, Ka Ming Wong, Xueliang Zhu, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates", IEEE Electron Device Letters, vol.34, no.7, pp.903, July 2013. DOI: 10.1109/LED.2013.2260126.


15.Jun Ma, Xueliang Zhu, Ka Ming Wong, Xinbo Zou, and Kei May Lau, "Improved GaN-based LED grown on Silicon (111) substrates using stress/dislocation-engineered interlayers", Journal of Crystal Growth, Vol.370, pp.265-268, 2013. DOI:10.1016/j.jcrysgro.2012.10.028


14. Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, Kei May Lau, "Improved Crystalline Quality and Light Output Power of GaN-based LEDs Grown on Si by Buffer Optimization", Physica Status Solidi (c), Volume 9 Issue 3-4, pp. 572, Mar 2012. DOI: 10.1002/pssc.201100442


13. Kei May Lau, Ka Ming Wong, Xinbo Zou, and Peng Chen, "Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper", Optics Express, Vol. 19, Issue S4, pp. A956-A961, 2011. DOI: 10.1364/OE.19.00A956


12. Xinbo Zou, Hu Liang and Kei May Lau, "Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution", Physica Status Solidi (c), Vol. 7, No.7-8, pp. 2171, 2010. DOI: 10.1002/pssc.200983527


11. Ka Ming Wong, Xinbo Zou, Chen Peng, and Kei May Lau, "Transfer of GaN- based light-emitting diodes from silicon growth substrate to copper", IEEE Electron Device Letters, Vol. 31, No. 2, 2010. DOI: 10.1109/LED.2009.2037346


10.Dongmei Deng, Naisen Yu, Yong Wang, Xinbo Zou, Hao-chung Kuo, Peng Chen, and Kei May Lau, "InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates", Applied Physics Letters 96(20): 201106, 2010. DOI: 10.1063/1.3427438


9. Yuefei Cai, Xinbo Zou, et al., “Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap”, 11th International Conference on Nitride Semiconductors (ICNS-11), 30th Aug. – 4th Sep. 2015, Beijing, China.


8. Xinbo Zou, Xu Zhang, W. C. Chong, Chak Wah Tang, and Kei May Lau, “High Efficiency Vertical-injection LEDs on Rigid and Flexible Substrates using GaN-on-Si Epilayers”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30th Aug. – 4th Sep. 2015.


7. Xing Lu, Huaxing Jiang, Chao Liu, Xinbo Zou, and Kei May Lau “Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA” ICNS-11, 30th Aug. – 4th Sep. 2015, Beijing, China.


6. Xinbo Zou, Xing Lu, Ryan Lucas, Thomas F. Kuech, Jonathan W. Choi, Padma Gopalan, and Kei May Lau, "Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO2 Patterned GaN/Si Templates", 56th Electronic Materials Conference (EMC), June 25-27, 2014, Santa Barbara, US.


5. Xinbo Zou, Ka Ming Wong, Wing Cheung Chong, Jun Ma, and Kei May Lau, "High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer", 10th International Conference on Nitride Semiconductors (ICNS-10), August 25-30, 2013, Washington, D.C, US.


4. Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, Kei May Lau, "Improved Crystalline Quality and Light Output Power of GaN-based LEDs Grown on Si by Buffer Optimization", 9th Semiconductors International Conference on Nitride (ICNS-9), July, 2011,UK.


3. Dongmei Deng, Naisen Yu,Yong Wang, Xinbo Zou, Peng Chen, and Kei May Lau, "III-Nitride LEDs Grown on Porous Si Substrates", 15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, United States, May 2010.


2. Xinbo Zou, Hu Liang and Kei May Lau, "Light extraction enhancement from GaN-based thin-film LEDs grown on silicon after substrate removal using HNA solution", 8th International Conference on Nitride Semiconductors (ICNS-8), 18-23 October, 2009, Jeju, Korea.


1. Ka Ming Wong, Xinbo Zou, Chen Peng, and Kei May Lau, "GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power", 36th International Symposium on Compound Semiconductors (ISCS), Aug.,2009, US.