News
April, 2024
·Jiaxiang Chen, Haitao Du and co-author's paper about "AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing" was accepted by "Applied Physics Letters Machine Learning". Congratulations!
·GaNology Lab 陈嘉祥，杜海涛及其合作者的题为“AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing”的文章，被《Applied Physics Letters Machine Learning》接收。恭喜！
·Han Gao, Yitian Gu and co-author's paper about "545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching" was accepted by "IEEE Electron Device Letters". Congratulations!
·GaNology Lab 高涵，顾怡恬及其合作者的题为“545 mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching”的文章，被《IEEE Electron Device Letters》接收。恭喜！
·Yitai Zhu and co-author's paper about "Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment" was accepted by "Microelectronics Journal". Congratulations!
·GaNology Lab 朱一泰及其合作者的题为“Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment”的文章，被《Microelectronics Journal》接收。恭喜！
·Chunlin Du and co-author's paper about "Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium" was accepted by "Numerical simulation and mathematical modelling". Congratulations!
·GaNology Lab 杜春琳及其合作者的题为“Acceleration of solving drift-diffusion equations enabled by estimation of initial value at non-equilibrium”的文章，被《Numerical simulation and mathematical modelling》接收。恭喜！
March, 2024
·Ke Li and co-author's paper about "Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier" was accepted by "Electronics". Congratulations!
·GaNology Lab 李轲及其合作者的题为“Nonlinear Capacitance Compensation Method for Integrating an MSM-2DEG Varactor with a GaN HEMT Power Amplifier”的文章，被《Electronics》接收。恭喜！
January, 2024
·Jiaxiang Chen and co-author's paper about "Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors" was accepted by "Journal of Applied Physics". Congratulations!
·GaNology Lab 陈嘉祥及其合作者的题为“Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors”的文章，被《Journal of Applied Physics》接收。恭喜！
·Haolan Qu and co-author's paper about "Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures" was accepted by "Journal of Vacuum Science & Technology A". Congratulations!
·GaNology Lab 屈昊岚及其合作者的题为“Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures”的文章，被《Journal of Vacuum Science & Technology A》接收。恭喜！
·Jin Sui and co-author's paper about "Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy" was accepted by "Journal of Semiconductors". Congratulations!
·GaNology Lab 睢金及其合作者的题为“Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy”的文章，被《Journal of Semiconductors》接收。恭喜！
December, 2023
·Congratulations to Yitian Gu, Yu Zhang, Jiaxiang Chen, and Haolan Qu for winning the outstanding student. Congratulations to Junmin Zhou, Jin Sui, Haitao Du, and Yitai Zhu for winning the merit student.
·恭喜顾怡恬，张羽，陈嘉祥与屈昊岚获三好学生，睢金，周隽民，杜海涛与朱一泰获优秀学生称号。
November,2022
·Chen Jiaxiang and Du Haitao gave oral presentations at the ICNS-14, and they were awarded the Best Student Award by the presidium of the conference. More.
·陈嘉祥和杜海涛在大会做口头报告，经过会议主席团推荐及评审后，均荣获最佳学生奖。
September,2023
·Wenbo Ye officially registered as graduate students of SIST, ShanghaiTech.
·叶文博正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
·Yu Zhang and co-author's paper about "Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
·GaNology Lab 张羽及其合作者的题为“Small Vth Shift and Low Dynamic Ron in GaN MOSHEMT with ZrO2 Gate Dielectric”的文章，被《IEEE Transactions on Electron Devices》接收。恭喜！
·Jiaxiang Chen and Haitao Du's paper were all accepted by "The 14th International Conference on Nitride Semiconductors (ICNS-14)". Congratulations!
·GaNology Lab 陈嘉祥和杜海涛的两篇文章均被The 14th International Conference on Nitride Semiconductors (ICNS-14)接收。恭喜！
·Haolan Qu's paper about "Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy" was accepted by "Semiconductor Science and Technology". Congratulations to DLTS group!
·GaNology Lab 屈昊岚的题为“Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy”的文章，被《Semiconductor Science and Technology》接收。恭喜DLTS小组！
July,2023
·Junmin Zhou's paper about "RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications" was accepted by "IEEE Electron Device Letters". Congratulations!
·GaNology Lab 周隽民的题为“RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications”的文章，被《IEEE Electron Device Letters》接收。恭喜！
June,2023
·Jin Sui, Jiaxiang Chen, and Haolan Qu attended to China Semiconductor Technology International Conference (CSTIC) in Shanghai.
·睢金，陈嘉祥和屈昊岚同学在上海参加了中国国际半导体技术大会。
May,2023
·Congratulations to Wenhan Song and Lihua Xu, the graduate students of Ganology lab in 2020, for successfully completing their studies.
·祝贺GaNology Lab 2020级硕士研究生（2023级毕业生）宋文涵和徐梨花顺利完成学业。
November,2022
·Haolan Qu's paper about "Emission and Capture Characteristics of Electron Trap (Eemi=0.8eV) in Si-doped β-Ga2O3 Epilayer" was accepted by "Semiconductor Science and Technology". Congratulations to DLTS group!
·GaNology Lab 屈昊岚的题为“Emission and Capture Characteristics of Electron Trap (Eemi=0.8eV) in Si-doped β-Ga2O3 Epilayer”的文章，被《Semiconductor Science and Technology》接收。恭喜DLTS小组！
September,2022
·Haitao Du, Han Gao and Yitai Zhu officially registered as graduate students of SIST, ShanghaiTech.
·杜海涛，高涵和朱一泰正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
July,2022
·Yu Zhang and Lihua Xu's paper about "Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer" was accepted by "IEEE Journal of the Electron Devices Society". Congratulations!
·GaNology Lab 张羽与徐梨花合作的题为“Dynamic Characteristics of GaN MISHEMT with 5-nm in-situ SiNx Dielectric Layer”，被《IEEE Journal of the Electron Devices Society》接收。恭喜！
June,2022
·Wenhan Song and Haowen Guo's paper about "Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection" was accepted by "Electronics". Congratulations!
·GaNology Lab 宋文涵与郭好文合作的题为“Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection”，被《Electronics》接收。恭喜！
·Congratulations to Min Zhu for winning the outstanding graduates of ShanghaiTech University.
·恭喜朱敏获得上海科技大学优秀毕业生称号。
May,2022
·Congratulations to Min Zhu, the graduate students of Ganology lab in 2019, for successfully completing their studies.
·祝贺GaNology Lab 2019级硕士研究生（2022级毕业生）朱敏顺利完成学业。
·Jiaxiang Chen and Haolan Qu's paper about "Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy" was accepted by "Applied Physics Letters". Congratulations!
·GaNology Lab 陈嘉祥与屈昊岚合作的题为“Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy”，被《Applied Physics Letters》接收。恭喜！
·Junmin Zhou and Haowen Guo's paper about "Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair" was accepted by "Microelectronics Journal". Congratulations!
·GaNology Lab 周隽民与郭好文合作的题为“Demonstration and Modeling of Frequency Tripler Based on GaN Schottky Diode Pair”，被《Microelectronics Journal》接收。恭喜！
April,2022
·Yitian Gu's paper about "Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
·GaNology Lab 顾怡恬与课题组其他同学合作的题为“Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si”，被《IEEE Transactions on Electron Devices》接收。恭喜！
January,2022
·Congratulations to Min Zhu for winning the merit student and Jiaxiang Chen & Yu Zhang for winning the outstanding student.
·恭喜朱敏获三好学生，陈嘉祥与张羽获优秀学生称号。
November,2021
· Jiaxiang Chen and Haolan Qu attended to the Photonics in Chemical Physics (PICP 2021).
·陈嘉祥和屈昊岚同学参加了《化学物理光子学》线上会议。
· Jiaxiang Chen and Haolan Qu attended to the Asia Communications and Photonics Conference (ACP 2021) in Shanghai.
·陈嘉祥和屈昊岚同学在上海参加了亚洲光纤通信与光电国际会议。
· Jiaxiang Chen and Haolan Qu attended to the national wide bandgap semiconductor conference in Xiamen.
·陈嘉祥和屈昊岚同学在厦门参加了第四届全国宽禁带半导体学术会议。
August,2021
·Min Zhu, Jiaxiang Chen and Haowen Guo's paper about "Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes" was accepted by "Microelectronics Reliability". Congratulations!
·GaNology Lab 朱敏、陈嘉祥和郭好文合作的题为“Temperature-Dependent Electrical Characterizations of Neutron-Irradiated GaN Schottky Barrier Diodes”，被《Microelectronics Reliability》接收。恭喜！
July,2021
·Dr. Xinbo Zou was invited to give a report entitled “Characterization of GaN electronic devices at low temperature” at “The 15th China Semiconductor Industry Association Annual Conference on Semiconductor Discrete Devices”.
·邹新波教授受邀在第十五届中国半导体行业协会半导体分立器件年会会议上做有关氮化镓器件的报告，题目为《氮化镓电子器件的低温特性表征》。
·Congratulations to Yuliang Zhang and Yangqian Wang, the graduate students of Ganology lab in 2018, for successfully completing their studies.
·祝贺GaNology Lab 2018届硕士研究生张玉良，王阳倩顺利完成学业，开启人生新的篇章。
June,2021
·Congratulations to Yuliang Zhang for winning the outstanding graduates of ShanghaiTech University and Shanghai.
·恭喜张玉良获得上海科技大学与上海市普通高等学校优秀毕业生称号。
April,2021
·Haowen Guo and Junmin Zhou's paper about "Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures" was accepted by "IEEE Microwave and Wireless Components Letters". Congratulations!
·GaNology Lab 郭好文和周隽民合作的题为“Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures”，被《IEEE Microwave and Wireless Components Letters》接收。恭喜！
·Yitian Gu, Yangqian Wang and Jiaxiang Chen's paper about "Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
·GaNology Lab 顾怡恬，王阳倩和陈嘉祥合作的题为“Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs”，被《IEEE Transactions on Electron Devices》接收。恭喜！
March,2021
·本实验室尚有一个2021级研究生招生名额， 欢迎广大志愿考生以及调剂考生报考，英文流利者优先考虑。
·We welcome interested and self-motivated graduate student to join our lab. Fluent English will be considered as a plus.
·Jiaxiang Chen, Haolan Qu, Min Zhu, and Haowen Guo's paper about "Single-trap Emission Kinetic of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy" was accepted by "Semiconductor Science and Technology". Congratulations!
·GaNology Lab 陈嘉祥，屈昊岚，朱敏和郭好文合作的题为“Single-trap Emission Kinetic of Vertical β-Ga2O3 Schottky Diodes by Deep Level Transient Spectroscopy”，被《Semiconductor Science and Technology》接收。恭喜！
February,2021
·Yu Zhang, Min Zhu and Yuliang Zhang's paper about "A Review on GaN-based Two-Terminal Devices Grown on Si Substrates" was accepted by "Journal of Alloys and Compounds". Congratulations! https://authors.elsevier.com/a/1cjB93IWkc2vkK (This is a Share Link that is created by Elsevier. The link is providing 50 days' free access to our article.)
·GaNology Lab 张羽，朱敏和张玉良合作的题为“A Review on GaN-based Two-Terminal Devices Grown on Si Substrates”，被《Journal of Alloys and Compounds》接收。恭喜！
November,2020
·Congratulations to Yuliang Zhang for winning the national scholarship in 2020.
·恭喜张玉良获得2020年国家奖学金。
September,2020
·Wenhan Song, Lihua Xu and Chunlin Du officially registered as graduate students of SIST, ShanghaiTech.
·宋文涵，徐梨花和杜春琳正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
August,2020
·Yuliang Zhang, Min Zhu and Jiaxiang's paper about "Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates" was accepted by "IEEE Transactions on Electron Devices". Congratulations!
GaNology Lab 张玉良，朱敏和陈嘉祥合作的题为“Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates”，被《IEEE Transactions on Electron Devices》接收。恭喜！
July,2020
·Yangqian Wang, Yitian Gu and Haowen Guo's paper about "Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K" was accepted by "IEEE Journal of the Electron Devices Society". Congratulations!
GaNology Lab 王阳倩，顾怡恬和工程师郭好文合作的题为“Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K”，被《IEEE Journal of the Electron Devices Society》接收。恭喜！
January,2020
·Jiaxiang Chen and Min Zhu's paper about "Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures" was accepted by "Applied Physics Letters". Congratulations!
GaNology Lab 陈嘉祥和朱敏合作的题为“Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures”的工作，被《Applied Physics Letters》接收。恭喜！
January,2020
·Yu Zhang and Xinbo's paper about "GaN Single Nanowire p–i–n Diode for High-Temperature Operations" was accepted by "ACS Applied Electronic Materials". Congratulations!
GaNology Lab 张羽和邹新波合作的题为“GaN Single Nanowire p–i–n Diode for High-Temperature Operations”的工作，被《ACS Applied Electronic Materials》接收。恭喜！
October,2019
· Jiaxiang Chen and Binbin Sheng attended to the third national wide bandgap semiconductor conference in Xi’an.
·陈嘉祥和盛彬彬同学在西安参加了第三届全国宽禁带半导体学术会议。
September,2019
·Yu Zhang, Jiaxiang Chen and Min Zhu officially registered as graduate students of SIST, ShanghaiTech.
·张羽，陈嘉祥和朱敏正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
June,2019
·Owen Guo joined ShanghaiTech GaNology Lab as a RF engineering.
郭好文作为射频工程师加入上海科技大学信息学院GaNology Lab。
May,2019
·Yangqian Wang attended to the international conference CSW.
·王阳倩同学参加了CSW国际会议。
September,2018
·Yuliang Zhang and Yangqian Wang officially registered as graduate students of SIST, ShanghaiTech.
·张玉良和王阳倩正式入学上海科技大学信息学院成为GaNology Lab 的研究生。
August,2018
·Yuliang Zhang and Xinbo's paper about "Junction Barrier Schottky Diode" was accepted by "International Workshop on Nitride (IWN-2018)". Congratulations!
GaNology Lab 张玉良（信息学院2018级研究生）和邹新波合作的题为“Device Design Assessment of GaN Junction Barrier Schottky Diodes”的工作，被氮化物领域最大的会议IWN（IWN-2018， Nov, Kanazawa, Japan）接收。恭喜玉良！
June,2018
·Dr. Xinbo Zou was sponsored by "Pujiang Talent Program" to further his research on GaN PiN devices!
·邹新波博士成功获得2018年度上海市浦江人才计划支持，以推进其在GaN器件领域的研究。
June,2018
·Congratulations to Yu Shao and Weiliang Xia finishing their bachelor thesis in GaNology lab, and both of them were awarded "Excellence" after presentations.
·邵瑜，夏卫良顺利完成本科毕业论文，且毕业论文均被评为“优秀”，恭喜两位上科大首届本科生顺利毕业！
March,2018
·Congratulations to Yuliang Zhang, and Yangqian Wang on passing the Postgraduate entrance examination, and will start their new journey in GaNology lab, ShanghaiTech soon.
·张玉良，王阳倩顺利通过研究生入学考试，将进入上科大氮化镓电子器件实验室学习。
September,2017
·Dr. Xinbo Zou joined ShanghaiTech from Sep., 2017, working as a tenure-track assistant professor, PI in SIST. He will continue his research in III-N electronics from devices to systems and would like to invite motivated students to join the lab as well.
·邹新波博士加盟上海科技大学信息学院，并组建氮化镓电子器件实验室。